LGE a733 to-92 free download

File name a733_to-92.pdf

A733(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA PC Collector Power Dissipation 250 mW Dimensions in inches and (millimeters) TJ Junction Temperature 150 Tstg Junction and Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -50uA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -50uA, IC=0 -5 V Collector cut-off current ICBO VCB= -60V, IE=0 -0.1 uA Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 uA DC current gain hFE VCE= -6V, IC= -1mA 90 200 600 Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=- 10mA -0.18 -0.3 V Base-emitter voltage VBE VCE=-6V,IC=-1.0mA -0.58 -0.62 -0.68 V Transition frequency fT VCE=-6V,IC=-10mA 100 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHZ 6 pF VCE=-6V,IC=-0.3mA, Noise figure NF 20